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Samsung UFS 4.0

Samsung UFS 4.0

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Samsung UFS 4.0

Category: Embedded Memory

Brand: Samsung

Applications: Smartphone, Laptop, Automotive, Wearable Devices

Model Capacity NAND Flash Sequential Read Sequential Write Details
UFS 4.0 1TB 176-layer 7th Gen V-NAND 4,200 MB/s 2,800 MB/s View


Series Overview

Samsung UFS 4.0 uses 176-layer 7th Gen V-NAND and advanced controllers, providing sequential read speeds up to 4,200 MB/s and sequential write speeds up to 2,800 MB/s. Compared to previous UFS 2.1 products, this represents approximately 6× faster read and 3.1× faster write performance.

In terms of energy efficiency, UFS 4.0 delivers 6.0 MB/s per mA sequential read, a 46% improvement over the previous generation. The compact 11mm × 13mm × 1mm package optimizes space usage, and it is available in capacities up to 1TB.


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