Samsung HBM3E

Basic Information

Category: Memory Chip

Brand: Samsung

Applications

Server · Automotive · Networking

Key Specifications

Series: HBM3E

Capacity: 36GB

Data Rate: 9.8 Gbps per pin

Stacking: 12-High

Product Description

Samsung HBM3E 12-High (12H) adopts advanced technologies such as High-K Metal Gate (HKMG), which replaces conventional insulating layers with materials that reduce current leakage. This technology optimizes internal circuitry, improves performance, and increases power efficiency by approximately 12% compared with the previous generation.

The device delivers a data rate of up to 9.8 Gbps per pin, enabling an aggregate bandwidth of up to 1,250 GB/s. Samsung HBM3E 12H uses Through-Silicon Via (TSV) technology to stack twelve layers of 24Gb DRAM dies, achieving an industry-leading 36GB capacity.

Compared with the previous 8-layer HBM3 generation, capacity is increased by 50%. Advanced Thermal Compression Non-Conductive Film (TC NCF) is applied to improve heat dissipation and maintain stable operation within optimal temperature ranges. HBM3E is pin-compatible with HBM3, allowing an easy transition from HBM3 to HBM3E in existing hardware designs.