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Samsung HBM3 Icebolt - 24Gb

Samsung HBM3 Icebolt - 24Gb

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Samsung HBM3 Icebolt - 24Gb

High-Density HBM3 for AI and Exascale Computing

Samsung HBM3 Icebolt 24Gb is a next-generation high-bandwidth memory die engineered for AI accelerators, hyperscale data centers, and advanced HPC platforms. Built on TSV (Through-Silicon Via) stacking architecture, it increases per-die density while sustaining ultra-high bandwidth and improved power efficiency.

The 24Gb density enables higher total stack capacity when configured in multi-layer HBM3 stacks, supporting large-scale AI model training, scientific simulation, and data-intensive GPU computing environments.

Technical Overview

  • Memory Type: HBM3
  • Die Density: 24Gb DRAM die
  • Stack Configuration: Up to 12-high stacking
  • Interface Width: 1024-bit
  • Data Rate: Up to 6.4 Gbps per pin
  • Bandwidth: Up to 819 GB/s per stack (configuration dependent)
  • Error Protection: Advanced On-Die ECC (ODECC)

Operating at up to 6.4 Gbps per pin across a 1024-bit interface, HBM3 Icebolt delivers up to 819 GB/s bandwidth per stack configuration. This throughput level supports high bandwidth memory for AI accelerators and large-scale GPU clusters where sustained data movement is critical.

Density Scaling for Advanced AI Workloads

With 24Gb die density, HBM3 Icebolt enables larger effective stack capacities compared to earlier 16Gb implementations. In 12-layer stack configurations, total memory capacity increases significantly without sacrificing bandwidth.

Higher density improves data locality and reduces memory bottlenecks in large language model training, generative AI workloads, financial modeling, and exascale computing systems.

Improved Power Efficiency

HBM3 Icebolt introduces architectural optimizations that improve energy efficiency by approximately 10% compared to previous HBM generations. Refined signal routing and enhanced power distribution reduce energy per transferred bit, supporting stable operation in data center GPU memory deployments.

Enhanced Reliability

The enhanced On-Die ECC mechanism supports correction of wider multi-bit error patterns beyond single-bit correction used in earlier HBM solutions. This improves long-term stability in AI training servers, HPC clusters, and sustained inference environments.

Part Numbers

  • KHBAC4A03D-MC1H
  • KHBAC4A03C-MC1H

FAQ

Q1: Is Samsung HBM3 Icebolt 24Gb a memory module?
No. It is a stacked DRAM component intended for integration onto silicon interposers inside GPUs and AI accelerators. It is not a DIMM or plug-in memory module.

Q2: What does 24Gb indicate?
24Gb refers to the per-die storage density. When multiple dies are vertically stacked, total memory capacity per HBM3 stack increases accordingly.

Q3: What systems typically use HBM3 Icebolt 24Gb?
AI accelerator platforms, hyperscale cloud GPU infrastructure, exascale computing systems, and advanced high performance computing clusters.


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