Samsung HBM3 Icebolt - 16Gb

Next-Generation High Bandwidth Memory for AI and HPC

Samsung HBM3 Icebolt 16Gb is a next-generation high-bandwidth memory solution engineered for AI accelerators, hyperscale data centers, and high performance computing (HPC) platforms. Built on advanced TSV (Through-Silicon Via) stacking architecture, HBM3 significantly increases bandwidth density while improving thermal and power efficiency.

Designed for large-scale AI training and data-intensive computing, HBM3 Icebolt delivers higher per-pin transfer rates and improved stack scalability compared to previous HBM generations.

Technical Overview

• Memory Type: HBM3
• Die Density: 16Gb DRAM die
• Stack Configuration: Up to 12-high stacking
• Per-pin Data Rate: Up to 6.4 Gbps
• Bandwidth: Up to 819 GB/s per stack (configuration dependent)
• Interface Width: 1024-bit
• Error Protection: Advanced On-Die ECC (ODECC)

At 6.4 Gbps per pin across a 1024-bit interface, HBM3 Icebolt can deliver up to 819 GB/s bandwidth per stack configuration. This makes it well suited for high bandwidth memory for AI accelerators, GPU-based training clusters, and exascale computing systems.

Stack Architecture and Capacity Scaling

HBM3 Icebolt integrates up to 12 layers of 10nm-class 16Gb DRAM dies using TSV vertical interconnect technology. Depending on stack configuration, total stack capacity can reach 24GB, increasing memory density by approximately 1.5× compared to prior generations.

Higher density and faster transfer rates reduce memory bottlenecks in deep neural network training, large simulation workloads, and advanced data analytics pipelines.

Power Efficiency

HBM3 Icebolt improves power efficiency by approximately 10% compared to previous-generation HBM solutions. Optimized signaling and refined internal routing reduce energy consumption per transferred bit, helping lower total system power in data center GPU memory deployments.

Reliability Enhancement

The enhanced On-Die ECC implementation improves internal error correction capability. Unlike earlier generations that corrected single-bit errors, HBM3 Icebolt supports correction of wider multi-bit error patterns, improving data integrity under sustained high-throughput workloads.

Part Number

• KHBA84A03D-MC1H
• KHBA84A03C-MC1H

FAQ

Q1: Is Samsung HBM3 Icebolt 16Gb a module?
No. It is a stacked DRAM component designed for integration on silicon interposers within GPUs and AI accelerators. It is not a DIMM or plug-in memory module.

Q2: What is the difference between HBM2E and HBM3?
HBM3 increases per-pin data rate (up to 6.4 Gbps vs ~3.6 Gbps in HBM2E), improves stack scalability, and enhances ODECC reliability mechanisms. It also delivers significantly higher bandwidth per stack.

Q3: What systems typically use HBM3 Icebolt?
AI training accelerators, exascale supercomputers, hyperscale cloud GPU platforms, and advanced HPC clusters.