SamSung HBM2E Flashbolt - 16GB

High Bandwidth Memory for AI and Supercomputing Platforms

SamSung HBM2E Flashbolt 16GB is a stacked high-bandwidth DRAM solution designed for AI accelerators, supercomputing systems, and next-generation data center GPU architectures. Built on HBM2E technology, it increases memory density while maintaining high bandwidth and improved energy efficiency.

Compared with earlier HBM2 implementations, HBM2E Flashbolt extends stack capacity and improves signaling speed, enabling more efficient scaling in large neural network training and high performance computing environments.

Performance Architecture

• Memory Type: HBM2E
• Capacity: 16GB per stack
• I/O Width: 1024-bit
• Data Rate: Up to 3.6 Gbps per pin
• Bandwidth: Up to 460 GB/s per stack
• Technology: TSV (Through-Silicon Via) stacked DRAM
• Error Correction: On-Die ECC (ODECC)

With 3.6 Gbps signaling across a 1024-bit interface, a single stack can deliver up to 460 GB/s bandwidth. In multi-stack accelerator configurations, aggregate bandwidth scales to support AI training memory architectures and large-scale matrix processing workloads.

Expanded Capacity for Deep Learning

The 16GB capacity is achieved through eight stacked 10nm-class 16Gb DRAM dies, effectively doubling density compared to earlier HBM generations. Higher per-stack capacity enables deeper neural networks and reduces dependency on external memory expansion.

For engineers designing high bandwidth memory for AI accelerators, increased stack density improves data locality and minimizes memory bottlenecks during sustained compute operations.

Energy Efficiency

HBM2E Flashbolt improves power efficiency by approximately 18% compared with earlier HBM2 solutions. Enhanced internal routing and expanded power bump distribution improve voltage stability during high throughput conditions.

This makes it suitable for data center GPU memory platforms operating under strict thermal and power constraints.

Reliability and Stability

Integrated On-Die ECC supports internal error correction before data transmission, enhancing stability in long-duration supercomputing and AI cluster deployments.

Part Number List

• KHAA84901B-MC17
• KHAA84901B-JC16
• KHAA84901B-JC17
• KHAA84901B-MC16

FAQ

Q1: What is the difference between HBM2 and HBM2E Flashbolt?
HBM2E increases stack density and signaling speed compared to HBM2. While both use a 1024-bit interface, HBM2E supports higher per-stack capacity and improved bandwidth efficiency.

Q2: Is HBM2E Flashbolt 16GB a memory module?
No. It is a TSV-based stacked DRAM package designed for integration onto an interposer within GPU and accelerator systems, not a DIMM or plug-in module.

Q3: What applications typically use HBM2E 16GB?
AI training accelerators, high performance computing systems, data center GPU platforms, and large-scale simulation environments.