Samsung eUFS 3.0
Samsung eUFS 3.0
常规价格
$0.00
常规价格
促销价
$0.00
单价
单价
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Samsung eUFS 3.0
| Series | Capacity | Interface | Sequential Read | Sequential Write | Details |
|---|---|---|---|---|---|
| eUFS 3.0 | 128GB | UFS 3.0 | Up to 2,100 MB/s | Up to 410 MB/s | View |
| eUFS 3.0 | 512GB | UFS 3.0 | Up to 2,100 MB/s | Up to 410 MB/s | View |
Series Overview
Samsung eUFS 3.0 uses 5th generation V-NAND, offering 128GB and 512GB capacities, with a 1TB version planned later this year. The 512GB eUFS 3.0 is built from eight stacked 512Gb V-NAND chips with an integrated high-performance controller.
eUFS 3.0 provides sequential read speeds up to 2,100 MB/s—four times faster than SATA SSDs and 20× faster than traditional microSD cards. Sequential write speeds reach 410 MB/s, equivalent to SATA SSDs, with 50% improved write performance. The 512GB model also delivers 36% higher random read/write performance compared to eUFS 2.1, reaching 63K and 68K IOPS respectively.
