Samsung DDR4 DRAM

Basic Information

Category: Memory Chip

Brand: Samsung

Applications

Server · Aerospace & Defense · Telecom · Memory Module · AI

Key Specifications

Density Options: 4Gb / 8Gb / 16Gb / 32Gb

Organization: 512M x 8 · 256M x 16 · 1G x 8 · 1G x 16 · 2G x 8 · 2G x 16 · 4G x 4 · 4G x 8

Data Rates: 2133 / 2400 / 2666 / 3200 Mbps

Operating Voltage: 1.2V

Operating Temperature: 0 ~ 85 °C

Package: 96 FBGA

Product Description

Samsung DDR4 DRAM is built using industry-leading 1x-nanometer-class process technology, enabling lower power consumption while delivering higher performance. Compared with previous generations, power consumption is reduced by up to 25%, helping lower overall system cost.

Operating at a low voltage of 1.2V, Samsung DDR4 DRAM supports data rates of up to 3200 Mbps using Pseudo Open Drain (POD) signaling, making it suitable for demanding server, telecom, AI, and mission-critical applications.