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Samsung DDR4 8Gb SDRAM – 2133 / 2400 / 2666 / 3200 Mbps

Samsung DDR4 8Gb SDRAM – 2133 / 2400 / 2666 / 3200 Mbps

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Samsung DDR4 8Gb SDRAM – 2133 / 2400 / 2666 / 3200 Mbps

Mainstream DDR4 Memory Solution for Balanced Performance and Power Efficiency

Samsung DDR4 8Gb devices deliver stable bandwidth, low operating voltage and improved reliability for modern DDR4-based systems. Supporting speed grades from 2133 Mbps up to 3200 Mbps, this series is widely adopted in desktops, notebooks, embedded platforms and performance-oriented mainstream systems.

For customers sourcing Samsung DDR4 8Gb 3200 memory chip, maintaining DDR4 2666 industrial DRAM supply, or qualifying 1.2V DDR4 SDRAM for system upgrade, this series provides consistent performance with long-term platform compatibility.

Architecture & Electrical Characteristics

  • Density: 8Gb
  • Memory Type: DDR4 SDRAM
  • Speed grades: 2133 / 2400 / 2666 / 3200 Mbps
  • Operating voltage: 1.2V
  • Bank structure: 4 bank groups (16 banks total)
  • Interface: Pseudo Open Drain (POD)
  • Write CRC for multibit error detection
  • Parity protection for CMD/ADD signal integrity
  • Optimized for contemporary DDR4 controllers

Performance & Efficiency Overview

Compared with DDR3 operating at 1.5V, DDR4 operates at 1.2V, reducing overall power consumption while improving bandwidth efficiency. Enhanced bank grouping reduces interleaving delays and improves sequential data throughput under multitasking workloads.

  • Up to 30% bandwidth increase versus DDR3 platforms
  • Reduced energy consumption through advanced process technology
  • Improved access speed for moderate and high-load environments
  • Compatible with modern processor architectures

Part Number List – Samsung DDR4 8Gb Series

Part Number Density Memory Type
K4A8G085WC-BITD 8Gb DDR4
K4A8G085WC-BIWE 8Gb DDR4
K4A8G165WB-BCWE 8Gb DDR4
K4A8G165WC-BITD 8Gb DDR4
K4A8G165WC-BIWE 8Gb DDR4
K4A8G045WB-BCRC 8Gb DDR4
K4A8G045WB-BCTD 8Gb DDR4
K4A8G045WC-BCTD 8Gb DDR4
K4A8G085WB-BCPB 8Gb DDR4
K4A8G085WB-BCRC 8Gb DDR4
K4A8G085WB-BCTD 8Gb DDR4
K4A8G085WB-BIRC 8Gb DDR4
K4A8G085WB-BITD 8Gb DDR4
K4A8G085WC-BCPB 8Gb DDR4
K4A8G085WC-BCRC 8Gb DDR4
K4A8G085WC-BCTD 8Gb DDR4
K4A8G165WB-BCPB 8Gb DDR4
K4A8G165WB-BCRC 8Gb DDR4
K4A8G165WB-BCTD 8Gb DDR4
K4A8G165WB-BIRC 8Gb DDR4
K4A8G165WB-BITD 8Gb DDR4
K4A8G165WB-BIWE 8Gb DDR4
K4A8G165WC-BCPB 8Gb DDR4
K4A8G165WC-BCRC 8Gb DDR4
K4A8G165WC-BCTD 8Gb DDR4


FAQ – Engineering, Application & Procurement

1. When should 3200 Mbps be selected over 2133 or 2400?
For performance-oriented systems such as gaming platforms, multitasking workstations or moderate virtualization environments, 3200 Mbps improves effective throughput and reduces memory bottlenecks. For conservative industrial systems prioritizing long-term stability, 2133 or 2400 Mbps may provide broader compatibility margins.

2. What advantages does 8Gb density provide in board-level design?
8Gb devices allow flexible total memory configurations while maintaining balanced cost and power consumption. They are commonly used in mainstream desktop and embedded designs where moderate-to-high memory capacity is required without increasing component count excessively.

3. From a procurement perspective, what ensures stable lifecycle planning?
Selecting validated part numbers within the same DDR4 family helps reduce redesign and requalification costs. 1.2V DDR4 remains aligned with current platform standards, supporting long-term maintenance programs and minimizing transition risk in production environments.

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