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Samsung DDR4 4Gb SDRAM – 2133 / 2400 / 2666 / 3200 Mbps

Samsung DDR4 4Gb SDRAM – 2133 / 2400 / 2666 / 3200 Mbps

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Samsung DDR4 4Gb SDRAM – 2133 / 2400 / 2666 / 3200 Mbps

Energy-Efficient DDR4 Memory for Mainstream Platforms and Cost-Optimized System Designs

Samsung DDR4 4Gb devices provide stable bandwidth, reduced operating voltage and improved reliability for modern DDR4-based platforms. Supporting speed grades from 2133 Mbps up to 3200 Mbps, this series is widely implemented in desktops, laptops, embedded controllers and entry-level workstations requiring efficient and scalable memory solutions.

For customers sourcing Samsung DDR4 4Gb 3200 memory chip, maintaining DDR4 2666 industrial DRAM supply, or qualifying 1.2V DDR4 SDRAM for legacy-to-modern platform transition, this series delivers balanced performance and long-term availability.

Architecture & Electrical Characteristics

  • Density: 4Gb
  • Memory Type: DDR4 SDRAM
  • Speed grades: 2133 / 2400 / 2666 / 3200 Mbps
  • Operating voltage: 1.2V
  • Bank structure: 4 bank groups (16 banks total)
  • Interface: Pseudo Open Drain (POD)
  • Write CRC for multibit error detection
  • Parity protection for CMD/ADD signal integrity
  • Designed for compatibility with modern DDR4 controllers

Performance & Efficiency

Compared with DDR3 operating at 1.5V, DDR4 operates at 1.2V, reducing power consumption while increasing data throughput. Enhanced bank grouping improves interleaving efficiency and reduces access delay under moderate workloads.

  • Up to 30% bandwidth improvement versus DDR3 platforms
  • Lower energy consumption through advanced process technology
  • Improved sequential data throughput
  • Optimized for contemporary processors and system chipsets

Part Number List – Samsung DDR4 4Gb Series

Part Number Density Memory Type
K4A4G085WF-BCWE 4Gb DDR4
K4A4G085WF-BIWE 4Gb DDR4
K4A4G165WF-BCWE 4Gb DDR4
K4A4G165WF-BIWE 4Gb DDR4
K4A4G085WF-BCTD 4Gb DDR4
K4A4G085WF-BITD 4Gb DDR4
K4A4G165WE-BCWE 4Gb DDR4
K4A4G165WF-BCTD 4Gb DDR4
K4A4G165WF-BITD 4Gb DDR4
K4A4G045WE-BCRC 4Gb DDR4
K4A4G045WE-BCTD 4Gb DDR4
K4A4G085WE-BCPB 4Gb DDR4
K4A4G085WE-BCRC 4Gb DDR4
K4A4G085WE-BCTD 4Gb DDR4
K4A4G085WE-BIRC 4Gb DDR4
K4A4G085WE-BITD 4Gb DDR4
K4A4G165WE-BCPB 4Gb DDR4
K4A4G165WE-BCRC 4Gb DDR4
K4A4G165WE-BCTD 4Gb DDR4
K4A4G165WE-BIRC 4Gb DDR4
K4A4G165WE-BITD 4Gb DDR4
K4A4G165WE-BIW 4Gb DDR4


FAQ – Engineering & Procurement Perspective

1. For hardware engineers, when should 3200 Mbps be selected over 2133/2400?
Selection depends on memory controller capability and signal integrity margin. 3200 Mbps improves throughput for high-load environments such as multitasking or light virtualization. For conservative industrial designs prioritizing stability and compatibility, 2133 or 2400 Mbps may offer broader margin.

2. From a system integration standpoint, what are the advantages of 4Gb density?
4Gb devices allow flexible memory configurations while maintaining lower cost and power consumption. They are suitable for mainstream desktops, notebooks and embedded boards where moderate memory capacity is sufficient without increasing thermal design complexity.

3. From a procurement perspective, what ensures lifecycle stability?
Maintaining consistent die family and validated part numbers reduces redesign risk. 1.2V DDR4 remains aligned with modern platform standards, simplifying replacement planning and minimizing qualification overhead in ongoing production or maintenance programs.

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