Samsung DDR4 16Gb SDRAM – 2666 / 3200 Mbps

Samsung DDR4 16Gb SDRAM – 2666 / 3200 Mbps

High-Bandwidth DDR4 Memory for Modern Platforms and Performance-Critical Systems

Samsung DDR4 16Gb memory devices deliver increased bandwidth, improved reliability and lower operating power compared with previous DDR generations. Supporting speed grades of 2666 Mbps and 3200 Mbps, this series is widely used in performance desktops, workstations, embedded systems and data-intensive computing platforms requiring stable DDR4 supply.

For customers sourcing Samsung DDR4 16Gb 3200 memory chip, qualifying DDR4 2666 industrial DRAM, or maintaining 1.2V DDR4 high bandwidth memory device availability for production, this series provides balanced performance and efficiency for modern processor architectures.

Architecture & Performance Characteristics

• Density: 16Gb
• Memory Type: DDR4 SDRAM
• Speed grades: 2666 Mbps / 3200 Mbps
• Voltage: 1.2V operating voltage
• Bank structure: 4 bank groups (16 banks total)
• Interface: Pseudo Open Drain (POD)
• Improved interleaving efficiency to reduce delay
• Enhanced bandwidth versus DDR3 platforms

Power & Reliability Enhancements

• 1x nm class process technology
• Reduced core and standby power consumption
• Up to 25% lower energy usage versus DDR3
• Write CRC for multibit error detection
• Parity check for CMD/ADD signals

Compared with DDR3 operating at 1.5V, DDR4 operates at 1.2V, improving energy efficiency while increasing data throughput. With enhanced bank architecture and higher transfer rates up to 3200 Mbps, this memory enables faster processing of large workloads and improved system responsiveness.

Part Number List – Samsung DDR4 16Gb Series

FAQ – Technical Reference

1. What speed options are supported in this 16Gb DDR4 series?
This series supports 2666 Mbps and 3200 Mbps speed grades, depending on system controller configuration.

2. What voltage is required for board design?
The device operates at 1.2V, which reduces overall power consumption compared with DDR3 platforms operating at 1.5V.

3. What reliability mechanisms are integrated?
Samsung DDR4 integrates Write CRC for multibit error recognition and parity checks on CMD/ADD signals to enhance system-level reliability.