Samsung DDR3 4Gb SDRAM (E-die) – 1600 / 1866 / 2133 Mbps

Samsung DDR3 4Gb SDRAM (E-die) – 1600 / 1866 / 2133 Mbps

4Gb DDR3 FBGA Memory for System Upgrade, Industrial Boards and Legacy DDR3 Platforms

Samsung DDR3 4Gb E-die SDRAM provides increased density and stable bandwidth for systems built around DDR3 architecture. Supporting data rates up to 2133Mb/sec per pin (DDR3-2133), this device is widely deployed in desktops, notebooks, embedded platforms, automotive electronics, and medical control systems requiring dependable DDR3 memory supply.

For customers qualifying Samsung DDR3 4Gb 2133 memory chip, maintaining DDR3 1600 1866 industrial DRAM, or sourcing 4Gb DDR3 FBGA x4 x8 device for production continuity, this series remains a practical long-life solution.

Architecture & Electrical Characteristics

• Density: 4Gb
• Die revision: E-die
• Organization: 128Mbit × 4 I/Os × 8 banks or 64Mbit × 8 I/Os × 8 banks
• Speed grades: DDR3-1600 / DDR3-1866 / DDR3-2133
• Transfer rate: Up to 2133Mb/sec/pin
• Voltage: 1.5V ± 0.075V (VDD / VDDQ)
• Package: 78-ball FBGA (x4 / x8)
• Differential clock input (CK / CK#)
• DQS-based source synchronous interface
• RAS/CAS multiplexed addressing
• Supported features: Posted CAS, Programmable CWL, Internal Self Calibration, On-Die Termination (ODT), Asynchronous Reset

Performance & Power Efficiency

Compared with DDR2 platforms, DDR3 technology doubles bandwidth while reducing power consumption by up to 30%. Built on Samsung 30nm class DRAM process technology, the 4Gb device balances higher density with controlled thermal and power characteristics, supporting system upgrade without migration to newer memory generations.

Part Number List – Samsung DDR3 4Gb Series

FAQ – Technical Reference

1. What bus speeds are supported by this 4Gb DDR3 series?
The device supports DDR3-1600, DDR3-1866, and DDR3-2133 speed grades, delivering up to 2133Mb/sec per pin depending on controller configuration.

2. What organization options are available?
The 4Gb E-die device is organized as 128Mbit × 4 I/Os × 8 banks or 64Mbit × 8 I/Os × 8 banks, supplied in 78-ball FBGA packages.

3. What are the voltage requirements for system design?
The device operates at 1.5V ±0.075V for both VDD and VDDQ, consistent with standard DDR3 board-level design requirements.