Samsung DDR3 1GB DRAM – 1600 / 1866 / 2133 Mbps

Samsung DDR3 1GB DRAM – 1600 / 1866 / 2133 Mbps

Industrial-grade DDR3 SDRAM for embedded, PC, and legacy system applications

Samsung DDR3 1Gb I-die devices are designed for stable operation in notebooks, desktops, and industrial systems requiring reliable DDR3 memory. These devices support transfer rates up to 2133 Mb/sec per pin while maintaining efficient power consumption at 1.5V operation. Engineered with features such as posted CAS, programmable CWL, on-die termination (ODT), and internal calibration, this series is widely used in long-lifecycle platforms including automation equipment, automotive electronics, and medical devices.

Organizations sourcing Samsung DDR3 1Gb 1600 1866 2133 memory chips, planning DDR3 industrial DRAM replacement for legacy systems, or comparing 1Gb DDR3 x16 FBGA Samsung original parts will find this series suitable for maintenance and production continuity.

Key Technical Characteristics

• Density: 1Gb
• Organization: 8Mbit × 16 I/O × 8 banks
• Speed grades: DDR3-1600 / DDR3-1866 / DDR3-2133
• Voltage: 1.5V ±0.075V (VDD, VDDQ)
• Package: 96-ball FBGA (x16)
• Synchronous differential clock architecture (CK / CK#)
• DQS-based source synchronous data transfer
• Address multiplexing: RAS / CAS scheme

Typical Applications

• Embedded controllers and industrial boards
• Legacy desktop or notebook memory modules
• Automotive and medical electronics requiring DDR3 platforms
• Repair and maintenance of DDR3-based systems

Part Number List (Samsung DDR3 1Gb Series)

FAQ (Technical)

1. What clock rates are supported by this DDR3 series?
These devices support DDR3-1600, DDR3-1866, and DDR3-2133 transfer rates depending on the specific speed grade and system configuration.

2. What voltage requirements must the board provide?
The device operates at a single 1.5V supply (VDD and VDDQ), with tolerance of ±0.075V, which is standard for DDR3 SDRAM designs.

3. What interface features are required for proper operation?
The memory requires differential clock input (CK/CK#), DQS strobes for data synchronization, and supports ODT, posted CAS, programmable CWL, and internal calibration as defined in DDR3 specifications.