Samsung 9th Generation V-NAND

Basic Information

Category: Flash Memory Chip

Brand: :SAMSUNG

Applications

Mobile Storage · eMMC · Micro SD · Flash Card · Embedded Storage · SSD

Key Specifications

Generation: 9th Generation V-NAND

Capacity: 1Tb

NAND I/O Speed: Up to 3.2 Gb/s

Interface: Toggle 5.1

Product Description

Samsung 9th Generation V-NAND 1Tb TLC has entered mass production. Featuring Samsung’s smallest cell size and thinnest stack height to date, the bit density has increased by approximately 50% compared with the previous 8th Generation V-NAND.

Equipped with the next-generation NAND flash interface, Toggle 5.1, the data input and output speed is increased by 33%, reaching up to 3.2 Gb/s.

Compared with the previous generation, power consumption is reduced by approximately 10%.

Samsung plans to start mass production of quad-level cell (QLC) 9th Generation V-NAND in the second half of the year.