Samsung 8th Generation V-NAND

Basic Information

Category: Flash Memory Chip

Brand: :SAMSUNG

Status: Mass Production

Applications

Mobile Storage · USB 2.0 · USB 3.0 · eMMC · Micro SD · Flash Card · Embedded Storage · SSD

Key Specifications

Generation: 8th Generation V-NAND

Capacity: 1Tb

NAND I/O Speed: Up to 2.4 Gb/s

Interface: Toggle DDR 5.0

Product Description

Samsung 8th Generation V-NAND offers a 1Tb capacity and utilizes advanced 3D scaling technology to reduce surface area and overall height while minimizing cell-to-cell interference.

Based on the Toggle DDR 5.0 interface, the latest NAND flash standard, it delivers input/output speeds of up to 2.4 Gb/s, meeting the performance requirements of PCIe 4.0 and next-generation PCIe 5.0 storage solutions.