Micron MTA4ATF51264HZ-2G3B1 DDR4 SDRAM SODIMM 4GB
Micron MTA4ATF51264HZ-2G3B1 DDR4 SDRAM SODIMM 4GB
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Key Features
· 4GB DDR4 SDRAM SODIMM with 260-pin design for compact, high-performance applications
· Supports PC4-2400 data rates with CAS latency CL17
· Nominal operating voltage: VDD = 1.2V, VPP = 2.5V
· Integrated on-die termination (ODT) and data bus inversion (DBI) support
· Low-power auto self refresh (LPASR) for enhanced energy efficiency
· On-board I2C SPD EEPROM for reliable configuration and detection
· Halogen-free design with gold edge contacts for durability and compliance
Product Description
The Micron MTA4ATF51264HZ-2G3B1 is a 4GB DDR4 SDRAM SODIMM module designed to deliver consistent performance and energy efficiency for modern computing systems. Featuring a 260-pin small-outline dual in-line memory module (SODIMM) form factor, this memory solution supports data transfer rates up to PC4-2400 with CL17 latency. Its integration of advanced DDR4 technologies such as data bus inversion (DBI), on-die termination (ODT), and auto self-refresh enhances both signal integrity and power efficiency. With a single-rank, x64 configuration and robust thermal operating range, this module is ideal for laptops, embedded systems, and industrial applications where performance and reliability are essential.
Technical Specifications
|
Parameter |
Value |
|
Module Density |
4GB (512 Meg x 64, Single Rank) |
|
Module Type |
260-pin DDR4 SDRAM SODIMM |
|
Data Rate |
PC4-2400 (2400 MT/s) |
|
CAS Latency |
CL17 |
|
Voltage |
VDD = 1.2V, VPP = 2.5V, VDDSPD = 2.5V |
|
Burst Length |
BC4 or BL8 selectable |
|
Internal Banks |
8 banks; 2 groups of 4 |
|
Operating Temperature |
0°C to 95°C (Commercial) |
|
Termination |
Nominal and dynamic ODT |
|
Special Features |
Low-power auto self refresh, Data bus inversion (DBI), Fly-by topology |
Frequently Asked Questions (FAQs)
· Q: What is the main advantage of DDR4 SODIMM modules over DDR3?
A: DDR4 offers higher data transfer rates, reduced power consumption at 1.2V nominal, and enhanced features such as DBI and ODT for signal integrity.
· Q: Does the MTA4ATF51264HZ-2G3B1 support auto self-refresh?
A: Yes, it includes low-power auto self-refresh (LPASR), improving energy efficiency especially in mobile and embedded systems.
· Q: What applications are suitable for this module?
A: It is widely used in laptops, compact PCs, embedded computing devices, and industrial systems that require reliable high-speed memory.
· Q: How is data integrity maintained in this module?
A: Features such as on-die termination (ODT), fly-by topology, and data bus inversion (DBI) enhance reliability and reduce noise.
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