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Micron MTA4ATF51264HZ-2G3B1 DDR4 SDRAM SODIMM 4GB

Micron MTA4ATF51264HZ-2G3B1 DDR4 SDRAM SODIMM 4GB

Key Features

·       4GB DDR4 SDRAM SODIMM with 260-pin design for compact, high-performance applications

·       Supports PC4-2400 data rates with CAS latency CL17

·       Nominal operating voltage: VDD = 1.2V, VPP = 2.5V

·       Integrated on-die termination (ODT) and data bus inversion (DBI) support

·       Low-power auto self refresh (LPASR) for enhanced energy efficiency

·       On-board I2C SPD EEPROM for reliable configuration and detection

·       Halogen-free design with gold edge contacts for durability and compliance

Product Description

The Micron MTA4ATF51264HZ-2G3B1 is a 4GB DDR4 SDRAM SODIMM module designed to deliver consistent performance and energy efficiency for modern computing systems. Featuring a 260-pin small-outline dual in-line memory module (SODIMM) form factor, this memory solution supports data transfer rates up to PC4-2400 with CL17 latency. Its integration of advanced DDR4 technologies such as data bus inversion (DBI), on-die termination (ODT), and auto self-refresh enhances both signal integrity and power efficiency. With a single-rank, x64 configuration and robust thermal operating range, this module is ideal for laptops, embedded systems, and industrial applications where performance and reliability are essential.

Technical Specifications

Parameter

Value

Module Density

4GB (512 Meg x 64, Single Rank)

Module Type

260-pin DDR4 SDRAM SODIMM

Data Rate

PC4-2400 (2400 MT/s)

CAS Latency

CL17

Voltage

VDD = 1.2V, VPP = 2.5V, VDDSPD = 2.5V

Burst Length

BC4 or BL8 selectable

Internal Banks

8 banks; 2 groups of 4

Operating Temperature

0°C to 95°C (Commercial)

Termination

Nominal and dynamic ODT

Special Features

Low-power auto self refresh, Data bus inversion (DBI), Fly-by topology

Frequently Asked Questions (FAQs)

·       Q: What is the main advantage of DDR4 SODIMM modules over DDR3?

A: DDR4 offers higher data transfer rates, reduced power consumption at 1.2V nominal, and enhanced features such as DBI and ODT for signal integrity.

·       Q: Does the MTA4ATF51264HZ-2G3B1 support auto self-refresh?

A: Yes, it includes low-power auto self-refresh (LPASR), improving energy efficiency especially in mobile and embedded systems.

·       Q: What applications are suitable for this module?

A: It is widely used in laptops, compact PCs, embedded computing devices, and industrial systems that require reliable high-speed memory.

·       Q: How is data integrity maintained in this module?

A: Features such as on-die termination (ODT), fly-by topology, and data bus inversion (DBI) enhance reliability and reduce noise.

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