{"product_id":"samsung-ddr5-16gb-sdram-4800-mbps","title":"Samsung DDR5 16Gb SDRAM – 4800 Mbps","description":"\u003ch2\u003eSamsung DDR5 16Gb SDRAM – 4800 Mbps\u003c\/h2\u003e\n\u003cp\u003e\u003cstrong\u003eNext-Generation DDR5 Memory for High-Bandwidth, Data-Intensive Platforms\u003c\/strong\u003e\u003c\/p\u003e\n\u003cp\u003eSamsung DDR5 16Gb devices introduce a new level of bandwidth, capacity scalability and energy efficiency for modern computing systems. With a base speed of 4800 Mbps and architectural improvements over DDR4, this series is designed to support data-intensive workloads, next-generation processors and high-performance platforms.\u003c\/p\u003e\n\u003cp\u003eFor customers sourcing \u003cem\u003eSamsung DDR5 16Gb 4800 memory chip\u003c\/em\u003e, planning migration from \u003cem\u003eDDR4 to DDR5 platforms\u003c\/em\u003e, or qualifying \u003cem\u003e1.1V DDR5 SDRAM with on-die ECC\u003c\/em\u003e for advanced systems, this series delivers enhanced throughput and long-term platform alignment.\u003c\/p\u003e\n\u003ch3\u003eArchitecture \u0026amp; Technical Characteristics\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003eDensity: 16Gb\u003c\/li\u003e\n\u003cli\u003eMemory Type: DDR5 SDRAM\u003c\/li\u003e\n\u003cli\u003eSpeed grade: 4800 Mbps\u003c\/li\u003e\n\u003cli\u003eOperating voltage: 1.1V\u003c\/li\u003e\n\u003cli\u003eBank structure: 32 banks (double DDR4’s 16 banks)\u003c\/li\u003e\n\u003cli\u003eBurst length: 16 (double DDR4’s burst length of 8)\u003c\/li\u003e\n\u003cli\u003eDual 32-bit subchannels for improved efficiency\u003c\/li\u003e\n\u003cli\u003eOn-Die ECC (ODECC) for enhanced reliability\u003c\/li\u003e\n\u003cli\u003eOn-DIMM PMIC for improved power regulation\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003ePerformance Evolution\u003c\/h3\u003e\n\u003cp\u003eDDR5 significantly increases memory bandwidth compared with DDR4, improving large data set processing and reducing bottlenecks in high-load environments. With doubled bank count and extended burst length, DDR5 improves parallelism and efficiency in real-time computing scenarios.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eBase transfer rate: 4800 Mbps\u003c\/li\u003e\n\u003cli\u003eData transfer rate: 38.4 GB\/s\u003c\/li\u003e\n\u003cli\u003eImproved scalability for AI, virtualization and 8K workloads\u003c\/li\u003e\n\u003cli\u003eDesigned for next-generation CPUs and chipsets\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003ePower Efficiency \u0026amp; Reliability\u003c\/h3\u003e\n\u003cp\u003eOperating at 1.1V, DDR5 reduces power consumption compared to DDR4 (1.2V), supporting improved energy efficiency and lower thermal output. ODECC technology helps mitigate single-bit errors at the die level, improving signal integrity and system stability under demanding workloads.\u003c\/p\u003e\n\u003cul\u003e\n\u003cli\u003eUp to 30% greater power efficiency versus DDR4\u003c\/li\u003e\n\u003cli\u003eIntegrated on-die error correction\u003c\/li\u003e\n\u003cli\u003eEnhanced power management via PMIC\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003ePart Number List – Samsung DDR5 16Gb Series\u003c\/h3\u003e\n\u003ctable cellpadding=\"6\" cellspacing=\"0\" border=\"1\"\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003cth\u003ePart Number\u003c\/th\u003e\n\u003cth\u003eDensity\u003c\/th\u003e\n\u003cth\u003eMemory Type\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eK4RAH086VB-BCQK\u003c\/td\u003e\n\u003ctd\u003e16Gb\u003c\/td\u003e\n\u003ctd\u003eDDR5\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eK4RAH165VB-BCQ\u003c\/td\u003e\n\u003ctd\u003e16Gb\u003c\/td\u003e\n\u003ctd\u003eDDR5\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003ch3\u003e\n\u003cbr\u003eFAQ – Engineering, Application \u0026amp; Procurement Perspective\u003c\/h3\u003e\n\u003cp\u003e\u003cstrong\u003e1. What design considerations are required when migrating from DDR4 to DDR5?\u003c\/strong\u003e\u003cbr\u003eDDR5 introduces architectural changes including dual subchannels, increased bank count and on-DIMM PMIC integration. Engineers must verify motherboard layout compatibility, controller support and BIOS configuration. DDR5 is not backward compatible with DDR4 slots.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003e2. How does ODECC improve system-level reliability?\u003c\/strong\u003e\u003cbr\u003eOn-Die ECC (ODECC) corrects single-bit errors within the DRAM die before data is transmitted externally. While not equivalent to system-level ECC, it enhances signal robustness and reduces silent error risk in high-density memory configurations.\u003c\/p\u003e\n\u003cp\u003e\u003cstrong\u003e3. From a procurement perspective, why adopt DDR5 4800 now?\u003c\/strong\u003e\u003cbr\u003eDDR5 aligns with the latest CPU generations and provides higher bandwidth headroom for future workloads. Early qualification reduces redesign cycles and ensures compatibility with next-generation platforms while improving long-term lifecycle planning.\u003c\/p\u003e","brand":"我的商店","offers":[{"title":"Default Title","offer_id":47748591714543,"sku":null,"price":0.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0771\/8305\/8159\/files\/K4RAH086VB.png?v=1771500154","url":"https:\/\/www.sourcememorychips.com\/products\/samsung-ddr5-16gb-sdram-4800-mbps","provider":"SMC","version":"1.0","type":"link"}